Description

Brand: Diodes Incorporated
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 3000
Fall Time: 5.6 ns
Forward Transconductance — Min: 80 mS
Id — Continuous Drain Current: 210 mA
Manufacturer: Diodes Incorporated
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package / Case: SOT-23-3
Packaging: Reel, Cut Tape, MouseReel
Pd — Power Dissipation: 540 mW
Product Category: MOSFET
Product Type: MOSFET
Product: MOSFET Small Signal
Qg — Gate Charge: 223 pC
Rds On — Drain-Source Resistance: 5 Ohms
Rise Time: 3 ns
Series: 2N7002
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Type: Enhancement Mode Field Effect Transistor
Typical Turn-Off Delay Time: 7.6 ns
Typical Turn-On Delay Time: 2.8 ns
Vds — Drain-Source Breakdown Voltage: 60 V
Vgs — Gate-Source Voltage: -20 V, +20 V
Vgs th — Gate-Source Threshold Voltage: 1 V
Continuous Drain Current (Id) @ 25В°C 115mA
Power Dissipation-Max (Ta=25В°C) 370mW
Rds On — Drain-Source Resistance 7.5О© @ 50mA,5V
Transistor Polarity N Channel
Vds — Drain-Source Breakdown Voltage 60V
Vgs — Gate-Source Voltage 2.5V @ 250uA
Channel Mode Enhancement
Channel Type N
Maximum Continuous Drain Current 115 mA
Maximum Drain Source Resistance 13.5 Ω
Maximum Drain Source Voltage 60 V
Maximum Gate Source Voltage -20 V, +20 V
Maximum Gate Threshold Voltage 2.5V
Maximum Operating Temperature +150 °C
Maximum Power Dissipation 300 mW
Minimum Operating Temperature -55 °C
Mounting Type Surface Mount
Number of Elements per Chip 1
Package Type SOT-23
Pin Count 3
Transistor Configuration Single
Transistor Material Si
Width 1.4mm